US 12,271,113 B2
Method of manufacturing a semiconductor device
Chih-Cheng Liu, Hsinchu (TW); Yi-Chen Kuo, Taichung (TW); Jia-Lin Wei, Hsinchu (TW); Ming-Hui Weng, New Taipei (TW); Yen-Yu Chen, Taipei (TW); Jr-Hung Li, Chupei (TW); Yahru Cheng, Taipei (TW); Chi-Ming Yang, Hsinchu (TW); Tze-Liang Lee, Hsinchu (TW); and Ching-Yu Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jan. 15, 2021, as Appl. No. 17/150,389.
Claims priority of provisional application 63/025,957, filed on May 15, 2020.
Claims priority of provisional application 63/002,247, filed on Mar. 30, 2020.
Prior Publication US 2021/0302839 A1, Sep. 30, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/16 (2006.01); G03F 7/11 (2006.01); H01L 21/027 (2006.01); G03F 7/20 (2006.01)
CPC G03F 7/167 (2013.01) [G03F 7/11 (2013.01); H01L 21/0274 (2013.01); G03F 7/2004 (2013.01)] 20 Claims
 
1. A method of manufacturing a semiconductor device, comprising:
depositing a photoresist composition comprising a first compound and a second compound over a substrate surface via atomic layer deposition (ALD) or chemical vapor deposition (CVD) to form a photoresist layer,
wherein the depositing a photoresist composition includes:
combining the first compound and the second compound in a vapor state to form the photoresist composition,
wherein the first compound is at least one of a sec-hexyl tris (dimethylamino) tin, t-hexyl tris (dimethylamino) tin, i-hexyl tris (dimethylamino) tin, n-hexyl tris (dimethylamino) tin, sec-pentyl tris (dimethylamino) tin, t-pentyl tris (dimethylamino) tin, i-pentyl tris (dimethylamino) tin, n-pentyl tris (dimethylamino) tin, sec-butyl tris (dimethylamino) tin, t-butyl tris (dimethylamino) tin, i-butyl tris (dimethylamino) tin, n-butyl tris (dimethylamino) tin, sec-butyl tris (dimethylamino) tin, i-propyl (tris) dimethylamino tin, n-propyl tris (diethylamino) tin, and analogous alkyl (tris) (t-butoxy) tin compounds, including sec-hexyl tris (t-butoxy) tin, t-hexyl tris (t-butoxy) tin, i-hexyl tris (t-butoxy) tin, n-hexyl tris (t-butoxy) tin, sec-pentyl tris (t-butoxy) tin, t-pentyl tris (t-butoxy) tin, i-pentyl tris (t-butoxy) tin, n-pentyl tris (t-butoxy) tin, t-butyl tris (t-butoxy) tin, i-butyl tris (butoxy) tin, n-butyl tris (butoxy) tin, sec-butyl tris (butoxy) tin, i-propyl (tris) dimethylamino tin, or n-propyl tris (butoxy) tin, and
the second compound is at least one of an amine, a borane, or a phosphine; selectively exposing the photoresist layer to actinic radiation to form a latent pattern;
developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern exposing a portion of the substrate surface; and
removing a portion of the substrate exposed by the developing.