US 12,271,073 B2
Back cover and processing method thereof, and electronic device
Chengjie Gao, Shenzhen (CN)
Assigned to Honor Device Co., Ltd., Shenzhen (CN)
Appl. No. 17/923,140
Filed by Honor Device Co., Ltd., Guangdong (CN)
PCT Filed Apr. 27, 2022, PCT No. PCT/CN2022/089608
§ 371(c)(1), (2) Date Nov. 3, 2022,
PCT Pub. No. WO2023/029530, PCT Pub. Date Mar. 9, 2023.
Claims priority of application No. 202110999310.9 (CN), filed on Aug. 28, 2021.
Prior Publication US 2024/0248338 A1, Jul. 25, 2024
Int. Cl. G02F 1/1333 (2006.01); C23C 14/08 (2006.01); C23C 14/10 (2006.01); C23C 14/14 (2006.01); G02F 1/1334 (2006.01); G02F 1/1335 (2006.01)
CPC G02F 1/133331 (2021.01) [C23C 14/083 (2013.01); C23C 14/10 (2013.01); C23C 14/14 (2013.01); G02F 1/1334 (2013.01); G02F 1/133512 (2013.01); G02F 2201/50 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An electronic device comprising a back cover, wherein the back cover comprises:
a transparent cover plate;
an electrochromic film layer, wherein the electrochromic film layer and the transparent cover plate are laminated; and
a shielding part, wherein the shielding part is disposed between an edge part of the electrochromic film layer and the transparent cover plate, and a thickness of the shielding part is less than 4 microns;
wherein the shielding part comprises a light shielding layer, and the light shielding layer comprises an indium layer and an indium alloy layer, wherein a thickness of the indium layer ranges from 10 nm to 50 nm, and wherein a thickness of the indium alloy layer ranges from 10 nm to 50 nm;
wherein the shielding part is disposed on a surface that is of the transparent cover plate and that faces the electrochromic film layer, wherein the shielding part further comprises an underlayer, and the underlayer is disposed between the light shielding layer and the transparent cover plate, wherein the underlayer is a silicon-containing underlayer or a zirconia-containing underlayer; and
wherein the light shielding layer further comprises an interleaved layer and the interleaved layer is one of:
a first interleaved layer comprising a silicon dioxide layer and a titanium dioxide layer that are successively and alternately laminated, or
a second interleaved layer comprising a silicon dioxide layer and a niobium oxide layer that are successively and alternately laminated, or
a third interleaved layer comprising a silicon dioxide layer and a tantalum oxide layer that are successively and alternately laminated.