US 12,270,943 B2
Light receiving element, distance measurement module, and electronic device
Hiroshi Katayama, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/252,779
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jun. 21, 2019, PCT No. PCT/JP2019/024640
§ 371(c)(1), (2) Date Dec. 16, 2020,
PCT Pub. No. WO2020/008907, PCT Pub. Date Jan. 9, 2020.
Claims priority of application No. 2018-129113 (JP), filed on Jul. 6, 2018.
Prior Publication US 2021/0255282 A1, Aug. 19, 2021
Int. Cl. H01L 27/146 (2006.01); G01S 7/481 (2006.01); G01S 17/46 (2006.01); H01L 27/148 (2006.01); H04N 25/771 (2023.01)
CPC G01S 7/4816 (2013.01) [G01S 7/4814 (2013.01); G01S 17/46 (2013.01); H01L 27/14612 (2013.01); H01L 27/14856 (2013.01); H04N 25/771 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A light receiving element, comprising:
a pixel, including:
a first charge holding unit and a second charge holding unit, each of which holds an electric charge generated by a photodiode;
a first transfer transistor that transfers the electric charge to the first charge holding unit, wherein the first transfer transistor includes a vertical transistor including a vertical gate electrode portion, and wherein a planar shape of the vertical gate electrode portion of the vertical transistor of the first transfer transistor is formed in an elongated shape having a second width in a direction orthogonal to a gate width direction longer than a first width in the gate width direction; and
a second transfer transistor that transfers the electric charge to the second charge holding unit, wherein the second transfer transistor includes a vertical transistor including a vertical gate electrode portion, and wherein a planar shape of the vertical gate electrode portion of the vertical transistor of the second transfer transistor is formed in an elongated shape having a second width in a direction orthogonal to a gate width direction longer than a first width in the gate width direction.
 
10. The light receiving element according to claim 1, wherein
when the first transfer transistor is turned on and the electric charge is transferred to the first charge holding unit, a negative bias is applied to the second transfer transistor.
 
19. An electronic device, comprising:
a light receiving element, including:
a pixel at least including:
a first charge holding unit and a second charge holding unit, each of which holds an electric charge generated by a photodiode;
a first transfer transistor that transfers the electric charge to the first charge holding unit, wherein the first transfer transistor includes a vertical transistor including a vertical gate electrode portion, and wherein a planar shape of the vertical gate electrode portion of the vertical transistor of the first transfer transistor is formed in an elongated shape having a second width in a direction orthogonal to a gate width direction longer than a first width in the gate width direction; and
a second transfer transistor that transfers the electric charge to the second charge holding unit, wherein the second transfer transistor includes a vertical transistor including a vertical gate electrode portion, and
wherein a planar shape of the vertical gate electrode portion of the vertical transistor of the second transfer transistor is formed in an elongated shape having a second width in a direction orthogonal to a gate width direction longer than a first width in the gate width direction.