US 12,270,778 B2
Full-scale dynamic detection of bacterial biofilm formation using MGZNO nanostructure modified multifunctional sensors
Yicheng Lu, East Brunswick, NJ (US); Pavel I. Reyes, New York, NY (US); Guangyuan Li, Piscataway, NJ (US); Yifan Wu, Highland Park, NJ (US); and Xilin Zhao, Livingston, NJ (US)
Assigned to RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY, New Brunswick, NJ (US)
Filed by Rutgers, The State University of New Jersey, New Brunswick, NJ (US)
Filed on Dec. 24, 2020, as Appl. No. 17/247,838.
Claims priority of provisional application 62/953,344, filed on Dec. 24, 2019.
Claims priority of provisional application 62/953,333, filed on Dec. 24, 2019.
Prior Publication US 2021/0190717 A1, Jun. 24, 2021
Int. Cl. G01N 27/27 (2006.01); G01N 27/414 (2006.01); G01N 29/02 (2006.01); G01N 29/036 (2006.01); G01N 29/04 (2006.01); G01N 29/24 (2006.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10N 30/30 (2023.01)
CPC G01N 27/27 (2013.01) [G01N 27/4145 (2013.01); G01N 27/4146 (2013.01); G01N 29/04 (2013.01); G01N 29/2443 (2013.01); H10D 30/6734 (2025.01); H10D 30/6755 (2025.01); H10D 62/118 (2025.01); H10N 30/302 (2023.02); G01N 2291/023 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A biosensor system for detecting the biofilm formation and development, comprising a dual gate thin-film transistor (DGTFT) biosensor and a bulk acoustic wave (BAW) sensor, where the DGTFT biosensor comprising
(a) a DGTFT transducer, comprising
a first substrate;
a bottom biasing gate deposited on the first substrate;
a bottom dielectric layer deposited on a top surface of the bottom biasing gate;
a channel layer comprising semiconducting MgxZn1-xO deposited on a top surface of the bottom dielectric layer, wherein 0<x≤0.06;
a top gate dielectric layer deposited on the channel layer;
a top sensing gate deposited on the top gate dielectric layer; and
a drain electrode and a source electrode each electrically connected to the channel layer; and
(b) a sensing pad receptor, comprising
a second substrate;
an electrode layer comprising an array of electrode patterns with different surface areas deposited on the second substrate;
a sensing nanostructure layer deposited and patterned on the array of electrode patterns, wherein the sensing nanostructure layer comprises MgyZn1-yO, wherein 0≤y≤0.1; and
wherein the sensing pad receptor is electrically connected to the DGTFT transducer;
where the BAW sensor is a nanostructure-modified quartz crystal microbalance (QCM) or thin film bulk acoustic wave resonator (TFBAR);
wherein the nanostructure-modified QCM comprises:
a commercial quartz crystal piezoelectric layer between a first top electrode and a first bottom electrode;
a nanostructure layer comprises MgyZn1-yO, wherein y is specified as the Mg composition;
wherein the MgyZn1-yO of the nanostructure layer and the MgyZn1-yO of the sensing nanostructure layer are the same;
wherein the nanostructure-modified TFBAR comprises:
a third substrate;
a second bottom electrode deposited and patterned on the third substrate;
a piezoelectric film;
a second top electrode deposited and patterned on a top surface of the piezoelectrode film;
a MgyZn1-yO nanostructure layer deposited and patterned on the top electrode surface of the said the TFBAR, wherein y is as defined above.