US 12,270,752 B2
EPI self-heating sensor tube as in-situ growth rate sensor
Zhepeng Cong, San Jose, CA (US); Tao Sheng, Santa Clara, CA (US); and Ashur J. Atanos, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 23, 2022, as Appl. No. 17/751,197.
Prior Publication US 2023/0375460 A1, Nov. 23, 2023
Int. Cl. G01N 21/03 (2006.01); C30B 25/14 (2006.01); C30B 25/16 (2006.01); G01N 21/84 (2006.01); H01L 21/67 (2006.01)
CPC G01N 21/0332 (2013.01) [C30B 25/14 (2013.01); C30B 25/16 (2013.01); G01N 21/8422 (2013.01); H01L 21/67253 (2013.01); G01N 2021/0389 (2013.01); G01N 2021/8427 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A growth rate sensor suitable for use during semiconductor substrate manufacturing, the growth rate sensor comprising:
a body;
an optically transparent window disposed at an end of the body;
a silicon containing coupon disposed inside of the body and adjacent to a first side of the optically transparent window;
a resistive heating element disposed within the body and adjacent to a second side of the optically transparent window;
a radiation sensor; and
an optical fiber disposed between the radiation sensor and the optically transparent window, wherein the optically transparent window is positioned in between the silicon containing coupon and the resistive heating element.