US 12,270,702 B2
Wireless light dosimeter
Philippe Smet, Ledeberg (BE); and David Van Der Heggen, Ghent (BE)
Assigned to UNIVERSITEIT GENT, Ghent (BE)
Appl. No. 18/247,675
Filed by UNIVERSITEIT GENT, Ghent (BE)
PCT Filed Oct. 4, 2021, PCT No. PCT/EP2021/077304
§ 371(c)(1), (2) Date Apr. 3, 2023,
PCT Pub. No. WO2022/073936, PCT Pub. Date Apr. 14, 2022.
Claims priority of application No. 20200074 (EP), filed on Oct. 5, 2020.
Prior Publication US 2024/0027264 A1, Jan. 25, 2024
Int. Cl. G01J 1/58 (2006.01)
CPC G01J 1/58 (2013.01) 12 Claims
OG exemplary drawing
 
1. A light sensing device for measuring a light intensity, comprising:
a light sensitive layer comprising a phosphor into which two different types of dopant ions are incorporated,
wherein one of said types of dopant ions is a first lanthanide and wherein the other one of said types of dopant ions is a second lanthanide different from said first lanthanide;
wherein said dopant ions are in a first state and/or in a second state and wherein:
a charge transfer of said dopant ions from said first state to said second state happens when said light sensitive layer is exposed to a second light energy, and
wherein said charge transfer of said dopant ions from said first state to said second state corresponds to a reverse charge transfer between said first lanthanide and said second lanthanide; and
a charge transfer of said dopant ions from said second state to said first state happens when said light sensitive layer is exposed to a first light energy larger than said second light energy,
wherein said first light energy corresponds to a wavelength comprised between 200 nm and 600 nm; and
wherein said charge transfer of said dopant ions from said second state to said first state corresponds to a forward charge transfer between said first lanthanide and said second lanthanide;
one or more optical filters on top of said light sensitive layer and being used to tune a spectral response of said light sensing device;
wherein said optical filters comprise a neutral density filter configured to allow tuning a dynamic range of said light sensing device; and wherein:
when said dopant ions are in said second state after exposure of said light sensitive layer to said second light energy, said light sensitive layer is configured to measure a first light intensity,
wherein said first light intensity is an intensity of light of said first light energy inducing said forward charge transfer between said first lanthanide and said second lanthanide bringing an amount of dopant ions from said second state to said first state; and
when said dopant ions are in said first state after exposure of said light sensitive layer to said first light energy, said light sensitive layer is configured to measure a second light intensity,
wherein said second light intensity is an intensity of light of said second light energy inducing said reverse charge transfer between said first lanthanide and said second lanthanide bringing an amount of dopant ions from said first state to said second state.