US 12,270,123 B2
Method for producing a substrate for the epitaxial growth of a layer of a galium-based III-N alloy
Eric Guiot, Bernin (FR)
Assigned to Soitec, Bernin (FR)
Appl. No. 18/247,859
Filed by Soitec, Bernin (FR)
PCT Filed Oct. 4, 2021, PCT No. PCT/FR2021/051708
§ 371(c)(1), (2) Date Apr. 4, 2023,
PCT Pub. No. WO2022/074317, PCT Pub. Date Apr. 14, 2022.
Claims priority of application No. 2010209 (FR), filed on Oct. 6, 2020.
Prior Publication US 2023/0374701 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 25/02 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); H01L 21/762 (2006.01)
CPC C30B 29/406 (2013.01) [C30B 25/205 (2013.01); H01L 21/76254 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of fabricating a substrate for epitaxial growth of a layer of gallium nitride (GaN), of aluminum gallium nitride (AlGaN) or of indium gallium nitride (InGaN), comprising the following successive steps:
providing a single-crystal silicon-carbide donor substrate;
implanting ionic species into the donor substrate so as to form a weakened region that defines a thin layer of single-crystal SiC to be transferred;
bonding the donor substrate to a first receiver substrate via a bonding layer;
detaching the donor substrate along the weakened region so as to transfer the thin layer of SiC to the first receiver substrate;
performing epitaxial growth of a layer of semi-insulating SiC having a thickness greater than 1 μm on the thin layer of SiC;
bonding the layer of semi-insulating SiC to a second receiver substrate, the second receiver substrate having a high electrical resistivity;
removing at least one portion of the bonding layer so as to detach the first receiver substrate; and
removing the transferred thin layer of single-crystal SiC, so as to uncover the layer of semi-insulating SiC.