US 12,270,122 B2
Silicon carbide wafer and semiconductor device
Jung Woo Choi, Cheonan-si (KR); Myung Ok Kyun, Cheonan-si (KR); Jong Hwi Park, Cheonan-si (KR); Jung Doo Seo, Cheonan-si (KR); Jung-Gyu Kim, Cheonan-si (KR); and Kap-Ryeol Ku, Cheonan-si (KR)
Assigned to SENIC Inc., Cheonan-si (KR)
Filed by SENIC Inc., Cheonan-si (KR)
Filed on Jun. 9, 2022, as Appl. No. 17/836,470.
Claims priority of application No. 10-2021-0078554 (KR), filed on Jun. 17, 2021.
Prior Publication US 2022/0403551 A1, Dec. 22, 2022
Int. Cl. H01L 29/16 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H01L 29/34 (2006.01); H01L 29/78 (2006.01)
CPC C30B 29/36 (2013.01) [C30B 25/20 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01); H01L 29/7813 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A silicon carbide wafer comprising one surface and the other surface opposite to the one surface,
wherein an average Rmax roughness of the one surface is 2.0 nm or less,
wherein an average Ra roughness of the one surface is 0.1 nm or less,
wherein an edge region is a region in which a distance from an edge of the silicon carbide wafer toward a center is 5% to 75% of a radius of the silicon carbide wafer,
wherein a central region is a region having a radius of 25% of the radius of the silicon carbide wafer at the center of the silicon carbide wafer, and
wherein a difference between an average Rmax roughness of the edge region of the one surface and an average Rmax roughness of the central region of the one surface is 0.01 nm to 0.5 nm.