US 12,269,753 B2
Ternary paraelectric material with space group Cc and method of manufacturing the same
Giyoung Jo, Suwon-si (KR); Chan Kwak, Yongin-si (KR); Hyungjun Kim, Suwon-si (KR); Euncheol Do, Seoul (KR); Hyeoncheol Park, Hwaseong-si (KR); and Changsoo Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 21, 2023, as Appl. No. 18/356,287.
Application 18/356,287 is a continuation of application No. 16/819,571, filed on Mar. 16, 2020, granted, now 11,858,829.
Claims priority of application No. 10-2019-0132390 (KR), filed on Oct. 23, 2019.
Prior Publication US 2023/0357043 A1, Nov. 9, 2023
Int. Cl. C01G 33/00 (2006.01); C01G 35/00 (2006.01); C04B 35/626 (2006.01); C04B 35/645 (2006.01); H01G 4/12 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01)
CPC C01G 33/006 (2013.01) [C04B 35/6261 (2013.01); C04B 35/62695 (2013.01); C04B 35/645 (2013.01); H01L 28/40 (2013.01); H10B 12/37 (2023.02); C01P 2002/72 (2013.01); C01P 2002/76 (2013.01); C01P 2006/10 (2013.01); C01P 2006/40 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A ternary paraelectric having a Cc structure comprising:
a material that belongs to a monoclinic system and is space group No. 9,
wherein the material has a chemical formula of A2B4O11
wherein a relative density of the A2B4O11 material is 90% or more compared to a fully dense A2B4O11 not containing a pore.