US 12,269,737 B2
Method for manufacturing gallium nitride quantum dots doped with metal ions
Kwang Seob Jeong, Seoul (KR); and Yun Chang Choi, Anyang-Si (KR)
Assigned to Korea University Research and Business Foundation, Seoul (KR)
Appl. No. 17/284,520
Filed by Korea University Research and Business Foundation, Seoul (KR)
PCT Filed May 8, 2019, PCT No. PCT/KR2019/005472
§ 371(c)(1), (2) Date Apr. 12, 2021,
PCT Pub. No. WO2020/075946, PCT Pub. Date Apr. 16, 2020.
Claims priority of application No. 10-2018-0121699 (KR), filed on Oct. 12, 2018.
Prior Publication US 2021/0340010 A1, Nov. 4, 2021
Int. Cl. C09K 11/62 (2006.01); C01B 21/06 (2006.01); C09K 11/02 (2006.01); C09K 11/08 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01)
CPC C01B 21/0632 (2013.01) [C09K 11/62 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/64 (2013.01); C01P 2006/60 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of manufacturing gallium nitride quantum dots doped with metal ions, comprising:
preparing a first solution comprising a first precursor including a group III element, a second precursor including a metal, and a compound for a ligand;
performing a reaction between the first precursor and the second precursor in the first solution;
controlling a temperature of the first solution within a first temperature range; and
allowing the first solution to react with a second solution in which a nitrogen-based compound is dissolved in a solvent to form gallium nitride quantum dots doped with metal ions.