US 12,269,736 B2
Method for fabricating imprint master, the imprint master, imprint and article
Masanao Kikuchi, Shimotsuke (JP)
Assigned to Dexerials Corporation, Shimotsuke (JP)
Appl. No. 17/906,863
Filed by Dexerials Corporation, Shimotsuke (JP)
PCT Filed Mar. 17, 2021, PCT No. PCT/JP2021/010894
§ 371(c)(1), (2) Date Sep. 21, 2022,
PCT Pub. No. WO2021/193297, PCT Pub. Date Sep. 30, 2021.
Claims priority of application No. 2020-057913 (JP), filed on Mar. 27, 2020.
Prior Publication US 2023/0128723 A1, Apr. 27, 2023
Int. Cl. B29C 33/00 (2006.01); B29C 33/42 (2006.01); B81C 99/00 (2010.01)
CPC B81C 99/009 (2013.01) [B29C 33/424 (2013.01); B81C 99/0085 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A method for fabricating an imprint master comprising:
a first forming step of forming micro-protrusion-and-recess structures having a first average pitch on one surface of a substrate; and
a second forming step of forming main recesses or main protrusions having a second average pitch larger than the first average pitch on the one surface of the substrate having the micro-protrusion-and-recess structures formed thereon, in a manner maintaining a shape of at least a portion of the micro-protrusion-and-recess structures in the main recesses or the main protrusions while the main recesses or the main protrusions are being formed, wherein
the first forming step comprising:
a first deposition step of depositing an inorganic resist layer on the one surface of the substrate;
a first exposure step of exposing the inorganic resist layer by thermal lithography to form a latent image corresponding to the micro-protrusion-and-recess structure;
a first developing step of developing the inorganic resist layer having the latent image formed thereon; and
a first etching step of etching the substrate using the inorganic resist layer having been developed as a first etching mask to form the micro-protrusion-and-recess structure, and
the second forming step comprising:
a second deposition step of depositing an organic resist layer on the one surface of the substrate having the micro-protrusion-and-recess structure formed thereon;
a second exposure step of exposing the organic resist layer by optical lithography to form a latent image corresponding to the main recess or the main protrusion;
a second developing step of developing the organic resist layer having the latent image formed thereon; and
a second etching step of etching the substrate using the organic resist layer having been developed as a second etching mask to form the main recess or the main protrusion, wherein
in the second etching step, an etching rate of the organic resist layer is greater than an etching rate of the substrate, and the substrate is etched until micro-protrusion-and-recess structures other than the portions corresponding to the main recesses or the main protrusions are removed.