US 12,269,123 B1
Laser edge shaping for semiconductor wafers
Joseph Taylor Budd, Pittsboro, NC (US); Tyler Evan Irion Whitmore, Durham, NC (US); and Davis Andrew McClure, Raleigh, NC (US)
Assigned to WOLFSPEED, INC., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Apr. 5, 2024, as Appl. No. 18/628,275.
Int. Cl. B23K 26/38 (2014.01); B23K 26/03 (2006.01); B23K 26/08 (2014.01); B23K 26/352 (2014.01); H01L 21/04 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); B23K 101/40 (2006.01)
CPC B23K 26/38 (2013.01) [B23K 26/03 (2013.01); B23K 26/08 (2013.01); B23K 26/3568 (2018.08); H01L 21/0475 (2013.01); H01L 21/268 (2013.01); H01L 21/3043 (2013.01); B23K 2101/40 (2018.08)] 21 Claims
OG exemplary drawing
 
1. A method, comprising:
providing emission of a laser from a laser source towards an edge portion of a semiconductor workpiece from a direction facing a side surface of the semiconductor workpiece, the side surface extending between a first major surface of the semiconductor workpiece and an opposing second major surface of the semiconductor workpiece; and
ablating the edge portion of the semiconductor workpiece with the laser to remove material from the edge portion of the semiconductor workpiece,
wherein the semiconductor workpiece comprises silicon carbide or a Group III-nitride.