US 12,269,030 B2
Detection chip and modification method therefor
Yudan Yin, Beijing (CN); Jing Yu, Beijing (CN); Haonan Liu, Beijing (CN); and Zhukai Liu, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 17/631,461
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Mar. 3, 2021, PCT No. PCT/CN2021/078950
§ 371(c)(1), (2) Date Jan. 29, 2022,
PCT Pub. No. WO2021/185087, PCT Pub. Date Sep. 23, 2021.
Claims priority of application No. 202010197439.3 (CN), filed on Mar. 19, 2020.
Prior Publication US 2022/0274106 A1, Sep. 1, 2022
Int. Cl. B01L 3/00 (2006.01); C23C 16/40 (2006.01); C23C 16/50 (2006.01); C23C 16/56 (2006.01)
CPC B01L 3/502707 (2013.01) [C23C 16/401 (2013.01); C23C 16/50 (2013.01); C23C 16/56 (2013.01); B01L 2200/0689 (2013.01); B01L 2200/12 (2013.01); B01L 2300/0819 (2013.01); B01L 2300/165 (2013.01); B01L 2400/086 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A modification method of a detection chip, comprising:
performing surface activation treatment on a hydrophilic layer on a first substrate constituting the detection chip to form a hydroxy-containing modification group on a surface of silicon oxide of the hydrophilic layer, thereby converting the silicon oxide to silicon hydroxyl, wherein the hydrophilic layer covers sample application platforms located on the first substrate; and
performing surface epoxidation treatment on the hydrophilic layer on which the hydroxy-containing modification group is formed, by using a solution containing an oxy compound to form an epoxy-containing modification group on a surface of the hydrophilic layer.