US 11,950,522 B2
Electronic device and method for manufacturing electronic device
Myoung Sub Kim, Icheon (KR); Tae Hoon Kim, Icheon (KR); Beom Seok Lee, Icheon (KR); Seung Yun Lee, Icheon (KR); Hwan Jun Zang, Icheon (KR); Byung Jick Cho, Icheon (KR); and Ji Sun Han, Icheon (KR)
Assigned to SK hynix Inc., Icheon (KR)
Filed by SK hynix Inc., Icheon (KR)
Filed on Jun. 22, 2022, as Appl. No. 17/847,034.
Application 17/847,034 is a continuation of application No. 16/984,688, filed on Aug. 4, 2020, granted, now 11,430,952.
Claims priority of application No. 10-2020-0027405 (KR), filed on Mar. 4, 2020.
Prior Publication US 2022/0320427 A1, Oct. 6, 2022
Int. Cl. H10N 70/00 (2023.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/841 (2023.02) [H10B 61/00 (2023.02); H10B 63/84 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 70/011 (2023.02); H10N 70/231 (2023.02)] 7 Claims
OG exemplary drawing
 
1. An electronic device including a semiconductor memory,
wherein the semiconductor memory includes:
a row line;
a column line intersecting the row line; and
a memory cell located between the row line and the column line, the memory cell including a first carbon electrode material and a second carbon electrode material which is formed on a surface of the first carbon electrode material and has a thickness of 100 Å or less; and
wherein the thickness of the second carbon electrode material is less than a thickness of the first carbon electrode material.