US 11,950,521 B2
Resistive random-access memory (RRAM) device and forming method thereof
Shu-Hung Yu, Kaohsiung (TW); Chun-Hung Cheng, Kaohsiung (TW); and Chuan-Fu Wang, Miaoli County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 11, 2022, as Appl. No. 17/741,471.
Application 17/741,471 is a division of application No. 17/211,875, filed on Mar. 25, 2021, granted, now 11,489,114.
Claims priority of application No. 202110212202.2 (CN), filed on Feb. 25, 2021.
Prior Publication US 2022/0271223 A1, Aug. 25, 2022
Int. Cl. H10N 70/00 (2023.01)
CPC H10N 70/826 (2023.02) [H10N 70/063 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A method of forming a resistive random-access memory (RRAM) device, comprising:
sequentially depositing a bottom electrode layer, a work function material layer, a bottom resistive layer, a top resistive layer, and a top electrode layer on a substrate;
patterning the top electrode layer and the top resistive layer to form a top electrode and a top part of a resistive material layer;
forming spacers covering sidewalls of the top part;
patterning the bottom resistive layer, the work function material layer and the bottom electrode layer to form a bottom part of the resistive material layer, a work function layer and a bottom electrode; and
forming work function spacers covering sidewalls of the bottom part, thereby constituting a RRAM cell.