US 11,950,513 B2
Semiconductor device and method for fabricating the same
Hui-Lin Wang, Taipei (TW); Wei Chen, Tainan (TW); Po-Kai Hsu, Tainan (TW); Yu-Ping Wang, Hsinchu (TW); and Hung-Yueh Chen, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jul. 5, 2022, as Appl. No. 17/857,185.
Application 17/857,185 is a division of application No. 16/884,060, filed on May 27, 2020, granted, now 11,417,838.
Claims priority of application No. 202010360779.3 (CN), filed on Apr. 30, 2020.
Prior Publication US 2022/0336735 A1, Oct. 20, 2022
Int. Cl. H10N 50/01 (2023.01); H01F 10/32 (2006.01); H10N 50/80 (2023.01)
CPC H10N 50/01 (2023.02) [H01F 10/3254 (2013.01); H01F 10/329 (2013.01); H10N 50/80 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
forming a first inter-metal dielectric (IMD) layer on a substrate;
forming a first metal interconnection and a second metal interconnection in the first IMD layer;
forming a channel layer on the first metal interconnection and the second metal interconnection;
forming a magnetic tunneling junction (MTJ) stack on the channel layer; and
removing part of the MTJ stack to form an MTJ.