US 11,950,460 B2
Display device
Nayun Kwak, Yongin-si (KR); Chulkyu Kang, Yongin-si (KR); Daesuk Kim, Yongin-si (KR); Ilgoo Youn, Yongin-si (KR); Dongsun Lee, Yongin-si (KR); Soyoung Lee, Yongin-si (KR); Jieun Lee, Yongin-si (KR); Junyoung Jo, Yongin-si (KR); and Minhee Choi, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on Jan. 30, 2023, as Appl. No. 18/161,434.
Application 18/161,434 is a continuation of application No. 17/085,288, filed on Oct. 30, 2020, granted, now 11,569,327.
Claims priority of application No. 10-2019-0160007 (KR), filed on Dec. 4, 2019.
Prior Publication US 2023/0172013 A1, Jun. 1, 2023
Int. Cl. G09G 3/3233 (2016.01); H01L 27/12 (2006.01); H10K 59/124 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01)
CPC H10K 59/126 (2023.02) [G09G 3/3233 (2013.01); H01L 27/1237 (2013.01); H10K 59/124 (2023.02); H10K 59/131 (2023.02); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A display device comprising:
a thin-film transistor including a semiconductor layer, a first gate electrode and a second gate electrode, wherein the first and second gate electrodes overlap the semiconductor layer in a plan view;
a first shielding layer overlapping a portion of the semiconductor layer between the first gate electrode and the second gate electrode, in a plan view;
a capacitor including a first electrode and a second electrode overlapping the first electrode; and
a scan line connected to the thin-film transistor, the scan line extending in a first direction and disposed in a space between the first shielding layer and the second electrode of the capacitor, in a plan view.