US 11,950,431 B2
Magnetic tunnel junction (MTJ) device and forming method thereof
Wei Chen, Tainan (TW); Hui-Lin Wang, Taipei (TW); Yu-Ru Yang, Hsinchu County (TW); Chin-Fu Lin, Tainan (TW); Yi-Syun Chou, Taipei (TW); and Chun-Yao Yang, Kaohsiung (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Dec. 2, 2022, as Appl. No. 18/073,574.
Application 18/073,574 is a continuation of application No. 17/157,952, filed on Jan. 25, 2021, granted, now 11,545,521.
Application 17/157,952 is a continuation of application No. 16/261,584, filed on Jan. 30, 2019, granted, now 10,943,948, issued on Mar. 9, 2021.
Claims priority of application No. 201910030827.X (CN), filed on Jan. 14, 2019.
Prior Publication US 2023/0091364 A1, Mar. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/14 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 41/34 (2006.01); H01L 23/552 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/00 (2023.02) [G11C 11/161 (2013.01); H01F 10/3254 (2013.01); H01F 41/34 (2013.01); H01L 23/552 (2013.01); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic tunnel junction (MTJ) device, comprising:
two magnetic tunnel junction elements arranged side by side;
an insulator conformally covers each of the two magnetic tunnel junction elements; and
a magnetic shielding layer disposed between the two magnetic tunnel junction elements and on the insulator, wherein the magnetic shielding layer comprises a nickel iron molybdenum alloy layer.