US 11,950,411 B2
Semiconductor memory devices with dielectric fin structures
Meng-Sheng Chang, Chu-bei (TW); and Chia-En Huang, Xinfeng Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Sep. 13, 2021, as Appl. No. 17/473,636.
Claims priority of provisional application 63/181,463, filed on Apr. 29, 2021.
Prior Publication US 2022/0352186 A1, Nov. 3, 2022
Int. Cl. H01L 27/112 (2006.01); H01L 29/06 (2006.01); H10B 20/20 (2023.01)
CPC H10B 20/20 (2023.02) [H01L 29/0665 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a plurality of first nanostructures extending along a first lateral direction;
a first epitaxial structure and second epitaxial structure respectively coupled to ends of each of the plurality of first nanostructures along the first lateral direction;
a dielectric fin structure disposed immediately next to a sidewall of each of the plurality of first nanostructures facing a second lateral direction perpendicular to the first lateral direction;
a first gate structure wrapping around each of the plurality of first nanostructures except for the sidewall that is immediately next to the dielectric fin; and
a metal structure disposed above the first gate structure and coupled to one of the first or second epitaxial structure.