US 11,950,409 B2
Semiconductor device having diode connectedto memory device and circuit including the same
Hsih-Yang Chiu, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Mar. 29, 2022, as Appl. No. 17/706,789.
Prior Publication US 2023/0320081 A1, Oct. 5, 2023
Int. Cl. H10B 12/00 (2023.01); G11C 11/406 (2006.01)
CPC H10B 12/50 (2023.02) [G11C 11/40611 (2013.01); H10B 12/31 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate comprising a first well region having a first conductive type;
a first gate structure disposed on the substrate;
a first doped region in the substrate and having a second conductive type different from the first conductive type, wherein the first gate structure and the first doped region are included in a first transistor;
a capacitor structure comprising a first electrode electrically coupled to the first doped region;
a second doped region in the substrate and having the second conductive type, wherein the second doped region is electrically coupled to the first electrode of the capacitor structure and the first doped region, wherein the second doped region and a portion of the first well region collectively serve as a diode; and
a third doped region in the substrate and having the first conductive type, wherein the third doped region surrounds the second doped region.