US 11,949,043 B2
Micro light-emitting diode
Yen-Chun Tseng, Zhunan Township (TW); Tzu-Yang Lin, Zhunan Township (TW); Jyun-De Wu, Zhunan Township (TW); Fei-Hong Chen, Zhunan Township (TW); and Yi-Chun Shih, Zhunan Township (TW)
Assigned to PLAYNITRIDE DISPLAY CO., LTD., Zhunan Township, Miaoli County (TW)
Filed by PlayNitride Display Co., Ltd., Zhunan Township, Miaoli County (TW)
Filed on Oct. 29, 2020, as Appl. No. 17/084,018.
Prior Publication US 2022/0140188 A1, May 5, 2022
Int. Cl. H01L 33/30 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01)
CPC H01L 33/305 (2013.01) [H01L 33/0008 (2013.01); H01L 33/22 (2013.01); H01L 33/325 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A micro light-emitting diode, comprising:
a first-type semiconductor layer having a first doping type;
a light-emitting layer over the first-type semiconductor layer;
a first-type electrode over the first-type semiconductor layer;
a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type;
a second-type electrode over the second-type semiconductor layer;
a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer comprises a doped region having the second doping type; and
a third-type semiconductor layer having the first doping type under the barrier layer, wherein the barrier layer and the third-type semiconductor layer are both non-ohmic contact layers, wherein the first-type electrode penetrates the second-type semiconductor layer, the light-emitting layer and extends into the first-type semiconductor layer and is electrically connected to the first-type semiconductor layer, and wherein a thickness of the third-type semiconductor layer is a first thickness, and a total thickness of the first-type semiconductor layer, barrier layer, and third-type semiconductor layer is a second thickness, wherein a ratio of the first thickness to the second thickness is greater than 0.9.