| CPC H01L 33/0093 (2020.05) [H01L 33/0095 (2013.01); H01L 33/62 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 2933/0066 (2013.01)] | 5 Claims |
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1. A method for manufacturing a semiconductor device, comprising:
forming a plurality of diodes on a first substrate;
forming a first pattern array on a second substrate;
transferring the plurality of diodes from the first substrate to the second substrate;
forming the first pattern array on a third substrate;
transferring the plurality of diodes from the second substrate to the third substrate;
forming a second pattern array on a fourth substrate; and
transferring the plurality of diodes from the third substrate to the fourth substrate,
wherein during transferring the plurality of diodes from the third substrate to the fourth substrate, spacer layers on the third substrate are aligned with plurality of spacer layers on the fourth substrate and plurality of non-aligned spacer layers on the fourth substrate are in between aligned plurality of spacer layers on the fourth substrate and at least one of the plurality of diodes is transferred between plurality of non-aligned spacer layers on the fourth substrate,
wherein a pitch between the plurality of diodes on the first substrate is different from a pitch of the first pattern array.
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