US 11,949,035 B2
Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method
Denis Rideau, Grenoble (FR); Dominique Golanski, Gieres (FR); Alexandre Lopez, Eindhoven (NL); and Gabriel Mugny, Grenoble (FR)
Assigned to STMicroelectronics (Crolles 2) SAS, Crolles (FR); and STMicroelectronics (Research & Development) Limited, Marlow (GB)
Filed by STMicroelectronics (Crolles 2) SAS, Crolles (FR); and STMicroelectronics (Research & Development) Limited, Marlow (GB)
Filed on Dec. 9, 2021, as Appl. No. 17/546,503.
Claims priority of application No. 2012999 (FR), filed on Dec. 10, 2020.
Prior Publication US 2022/0190184 A1, Jun. 16, 2022
Int. Cl. H01L 31/107 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/107 (2013.01) [H01L 31/186 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a semiconductor well doped with a first type of dopant; and
a single photon avalanche diode (SPAD) in the semiconductor well, said SPAD including a PN junction between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant;
wherein the first region comprises:
a first sub-region positioned in contact with a bottom of the second region and centered with respect to the second region;
a second sub-region forming an annular volume laterally surrounding the first sub-region and separated from the first sub-region at a gap by a portion of said semiconductor well; and
a third sub-region that diametrically connects opposite portions of the annular volume for the second sub-region and is in contact with a bottom of the first sub-region.