CPC H01L 31/105 (2013.01) [H01L 31/0288 (2013.01); H01L 31/1804 (2013.01); H01L 31/0216 (2013.01)] | 20 Claims |
1. A structure comprising:
a photodetector; and
a semiconductor material on the photodetector, the semiconductor material comprising a first dopant type contacting a top surface of the photodetector, a second dopant type contacting the top surface of the photodetector and intrinsic semiconductor material contacting the top surface of the photodetector and separating the first dopant type from the second dopant type.
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