US 11,949,030 B2
In-situ cap for germanium photodetector
Chen-Hao Chiang, Jhongli (TW); Eugene I-Chun Chen, Taipei (TW); and Chih-Ming Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 10, 2021, as Appl. No. 17/197,353.
Claims priority of provisional application 63/106,019, filed on Oct. 27, 2020.
Prior Publication US 2022/0131017 A1, Apr. 28, 2022
Int. Cl. H01L 31/028 (2006.01); H01L 31/0203 (2014.01); H01L 31/103 (2006.01); H01L 31/105 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/028 (2013.01) [H01L 31/0203 (2013.01); H01L 31/103 (2013.01); H01L 31/105 (2013.01); H01L 31/1808 (2013.01); H01L 31/1868 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a trench in a substrate;
placing the substrate, including the trench, within a chamber, and epitaxially growing within the chamber a germanium layer having a curved upper surface in the trench, and in situ within the chamber, epitaxially growing a silicon cap layer over the germanium layer; and
forming a silicon germanium layer to overlie the germanium layer and before the silicon cap layer is formed, wherein the silicon germanium layer is formed in situ in the chamber in which the germanium layer was grown.