US 11,949,016 B2
Multi-gate device and related methods
Shih-Hao Lin, Hsinchu (TW); Chih-Chuan Yang, Hsinchu (TW); Chih-Hsuan Chen, Hsinchu (TW); Bwo-Ning Chen, Keelung (TW); Cha-Hon Chou, Hsinchu (TW); Hsin-Wen Su, Hsinchu (TW); and Chih-Hsiang Huang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 13, 2021, as Appl. No. 17/319,794.
Prior Publication US 2022/0367726 A1, Nov. 17, 2022
Int. Cl. H01L 29/00 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10B 10/00 (2023.01)
CPC H01L 29/78618 (2013.01) [H01L 21/0259 (2013.01); H01L 21/26513 (2013.01); H01L 21/2652 (2013.01); H01L 21/266 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/161 (2013.01); H01L 29/24 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66636 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01); H10B 10/125 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, comprising:
providing a fin extending from a substrate;
forming a gate structure over the fin;
forming a source/drain feature within a source/drain region adjacent to the gate structure, wherein the source/drain feature includes a first epitaxial layer and a second epitaxial layer over the first epitaxial layer; and
doping the source/drain feature to provide a graded doping profile within the source/drain feature, wherein the graded doping profile is defined along a direction perpendicular to a top surface of the substrate;
wherein each of the first and second epitaxial layers include the graded doping profile, wherein the first epitaxial layer includes a graded carbon-doped layer, and wherein a first doping concentration of a bottom portion of the first epitaxial layer is greater than a second doping concentration of a top portion of the first epitaxial layer.