US 11,949,001 B2
Multi-gate devices and fabricating the same with etch rate modulation
Chih-Ching Wang, Kinmen County (TW); Chung-I Yang, Hsinchu (TW); Jon-Hsu Ho, New Taipei (TW); Wen-Hsing Hsieh, Hsinchu (TW); Kuan-Lun Cheng, Hsin-Chu (TW); Chung-Wei Wu, Hsin-Chu County (TW); and Zhiqiang Wu, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Mar. 21, 2022, as Appl. No. 17/699,362.
Application 17/699,362 is a division of application No. 16/901,881, filed on Jun. 15, 2020, granted, now 11,282,943.
Prior Publication US 2022/0208989 A1, Jun. 30, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/6681 (2013.01) [H01L 21/823431 (2013.01); H01L 29/41791 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
channel members disposed over a substrate;
a gate structure engaging the channel members; and
an epitaxial feature adjacent the channel members,
wherein:
at least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature,
the end portion of the at least one of the channel members includes a first dopant of a first concentration,
the outer portion of the epitaxial feature includes a second dopant of a second concentration, and
the first concentration is higher than the second concentration.