US 11,948,983 B2
Method for preparating SiC ohmic contact with low specific contact resistivity
Yanfei Hu, Xi'an (CN); Hui Guo, Xi'an (CN); Yuming Zhang, Xi'an (CN); Jiabo Liang, Xi'an (CN); Yanjing He, Xi'an (CN); Hao Yuan, Xi'an (CN); and Yuting Ji, Xi'an (CN)
Assigned to XIDIAN UNIVERSITY, Xi'an (CN)
Filed by Xidian University, Xi'an (CN)
Filed on Oct. 11, 2021, as Appl. No. 17/497,998.
Application 17/497,998 is a continuation of application No. PCT/CN2020/130352, filed on Nov. 20, 2020.
Claims priority of application No. 202010760136.8 (CN), filed on Jul. 31, 2020.
Prior Publication US 2022/0037480 A1, Feb. 3, 2022
Int. Cl. H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/165 (2006.01); H01L 29/45 (2006.01); H01L 29/16 (2006.01)
CPC H01L 29/401 (2013.01) [H01L 21/02378 (2013.01); H01L 21/02527 (2013.01); H01L 21/0262 (2013.01); H01L 21/043 (2013.01); H01L 21/0485 (2013.01); H01L 29/165 (2013.01); H01L 29/45 (2013.01); H01L 29/1606 (2013.01); H01L 29/1608 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A silicon carbide (SiC) ohmic contact preparation method, comprising:
selecting a SiC substrate;
preparing a graphene/SiC structure by forming a graphene on a silicon-face (Si-face) of the SiC substrate;
depositing a gold (Au) film on the graphene of the graphene/SiC structure;
forming a first transfer electrode pattern on the Au film by a first photolithography;
etching the Au film uncovered by the first transfer electrode pattern through a wet etching;
etching the graphene uncovered by the Au film through a plasma etching after the wet etching;
forming a second transfer electrode pattern on the SiC substrate by a second photolithography; and
depositing an Au material on the Au film exposed by the second transfer electrode pattern and forming an Au electrode and then annealing, so as to obtain a SiC ohmic contact.