US 11,948,970 B2
Semiconductor device and manufacturing method thereof
Kuo-Cheng Ching, Hsinchu County (TW); Ching-Wei Tsai, Hsinchu (TW); Kuan-Lun Cheng, Hsinchu (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Dec. 2, 2019, as Appl. No. 16/700,898.
Application 16/700,898 is a continuation of application No. 16/053,589, filed on Aug. 2, 2018, granted, now 10,497,778.
Claims priority of provisional application 62/592,912, filed on Nov. 30, 2017.
Prior Publication US 2020/0105870 A1, Apr. 2, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0649 (2013.01) [H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
first and second semiconductor fins having longitudinal axes in a first direction and laterally spaced along the first direction;
an isolation plug in contact with a longitudinal end of the first semiconductor fin and a longitudinal end of the second semiconductor fin, wherein the isolation plug has a first sidewall substantially coplanar with a sidewall of the first semiconductor fin and a sidewall of the second semiconductor fin along a direction parallel with the first direction, and a top surface of the isolation plug has a first portion and a second portion lower than the first portion;
a gate structure extending across the isolation plug along a second direction perpendicular to the first direction, the gate structure forming a continuous interface with the first portion of the top surface, the first sidewall, and a second sidewall of the isolation plug opposite the first sidewall, and the continuous interface having an inverted U-shape in a cross-sectional view taken along a longitudinal direction of the gate structure, the gate structure comprising a gate metal having a bottommost position lower than the first portion of the top surface of the isolation plug in the cross-sectional view; and
a gate spacer extending along a sidewall of the gate structure and having a bottom surface in contact with the second portion of the top surface of the isolation plug.