US 11,948,954 B1
Pixel sensors and methods of forming the same
Li-Wen Huang, Changhua (TW); Chung-Liang Cheng, Changhua (TW); Ping-Hao Lin, Tainan (TW); and Kuo-Cheng Lee, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 10, 2023, as Appl. No. 18/152,369.
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14623 (2013.01) [H01L 27/14625 (2013.01); H01L 27/14634 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a small pixel detector (SPD) comprising:
a first photodiode,
a blocking layer over the first photodiode comprising an oxide material and a metal, and
an electrode formed directly on the blocking layer and configured to cause a voltage differential across the blocking layer; and
a large pixel detector (LPD) comprising:
a second photodiode that is separated from the first photodiode by a trench isolation structure,
a passivation layer over the second photodiode, and
the electrode formed directly on the passivation layer.