US 11,948,933 B2
Semiconductor devices and methods of manufacturing semiconductor devices
Steven M. Etter, Phoenix, AZ (US); and Yupeng Chen, San Jose, CA (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Feb. 9, 2022, as Appl. No. 17/650,451.
Prior Publication US 2023/0253397 A1, Aug. 10, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 29/866 (2006.01)
CPC H01L 27/0248 (2013.01) [H01L 29/866 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first terminal;
a second terminal;
a first P-N diode having an anode coupled to the first terminal and a cathode;
a first Zener diode in a series combination with the first P-N diode having a cathode coupled to the cathode of the first P-N diode and an anode;
a second P-N diode coupled in parallel with the series combination of the first P-N diode and the first Zener diode, the second P-N diode having a cathode coupled to the first terminal and an anode; and
a second Zener diode having a cathode coupled to the second terminal and an anode, the anode of the second Zener diode coupled to the anode of the second P-N diode and coupled to the anode of the first Zener diode;
wherein the semiconductor device comprises:
a semiconductor substrate of a first conductivity type having a first peak dopant concentration no less than approximately 1.0×1019 atoms/cm3;
a first semiconductor region of a second conductivity type opposite to the first conductivity type and having approximately the first peak dopant concentration, wherein:
the first semiconductor region forms a first P-N junction with the semiconductor substrate; and
the first P-N junction forms a junction of the first Zener diode;
a second semiconductor region of the second conductivity type on the first semiconductor region, wherein the second semiconductor region has a second peak dopant concentration that is less than the first peak dopant concentration;
a first doped region of the first conductivity type in the second semiconductor region and overlying the first semiconductor region;
a third semiconductor region laterally adjacent to the first semiconductor region and having the first conductivity type and a third peak dopant concentration;
a fourth semiconductor region of the first conductivity type on the third semiconductor region having a fourth peak dopant concentration that is less than the third peak dopant concentration;
a second doped region of the second conductivity type in the fourth semiconductor region and overlying the third semiconductor region; and
a third doped region of the second conductivity type contiguous with a bottom side of the semiconductor substrate and the second terminal, wherein the third doped region comprises approximately the first peak dopant concentration to provide a second P-N junction with the semiconductor substrate, and wherein the second P-N junction forms a junction of the second Zener diode.