CPC H01L 25/16 (2013.01) [H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 2924/12 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01)] | 20 Claims |
1. A device comprising:
a processor die comprising logic devices;
a first memory die directly face-to-face bonded to the processor die by metal-to-metal bonds and by dielectric-to-dielectric bonds;
a first dielectric layer laterally surrounding the first memory die; and
a first redistribution structure over the first dielectric layer and the first memory die, a sidewall of the first redistribution structure being laterally coterminous with a sidewall of the processor die and with a sidewall of the first dielectric layer, the first redistribution structure comprising metallization patterns electrically coupled to the first memory die and the processor die.
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