US 11,948,920 B2
Semiconductor device and method for manufacturing the same, and semiconductor package
I-Chun Hsu, Hsinchu (TW); Yan-Zuo Tsai, Hsinchu (TW); Chia-Yin Chen, Hsinchu (TW); Yang-Chih Hsueh, Hsinchu (TW); Yung-Chi Lin, New Taipei (TW); Tsang-Jiuh Wu, Hsinchu (TW); and Wen-Chih Chiou, Miaoli County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,971.
Prior Publication US 2023/0063851 A1, Mar. 2, 2023
Int. Cl. H01L 25/18 (2023.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 25/0657 (2013.01) [H01L 25/0652 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06565 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a die stack comprising:
a first die comprising first through semiconductor vias;
second dies stacked on the first die, and each of the second dies comprise second through semiconductor vias; and
a third die stacked on the second dies and comprising third through semiconductor vias; and
a cap substrate disposed on the third die of the die stack,
wherein a surface of a topmost second die among the second dies that faces the third die comprises convex portions at positions where the second through semiconductor vias are configured in the topmost second die.