US 11,948,885 B2
Methods and apparatus for forming dual metal interconnects
Suketu A. Parikh, San Jose, CA (US); Rong Tao, San Jose, CA (US); Roey Shaviv, Palo Alto, CA (US); Joung Joo Lee, San Jose, CA (US); Seshadri Ganguli, Sunnyvale, CA (US); Shirish Pethe, Cupertino, CA (US); David Gage, San Jose, CA (US); Jianshe Tang, San Jose, CA (US); and Michael A Stolfi, Clifton Park, NY (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed on Jun. 24, 2021, as Appl. No. 17/356,717.
Application 17/356,717 is a continuation of application No. 16/516,817, filed on Jul. 19, 2019, granted, now 11,075,165.
Prior Publication US 2021/0320064 A1, Oct. 14, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5283 (2013.01) [H01L 21/02063 (2013.01); H01L 21/32125 (2013.01); H01L 21/67207 (2013.01); H01L 21/76814 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76871 (2013.01); H01L 21/76879 (2013.01); H01L 21/76882 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53223 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated tool for performing semiconductor processing, the integrated tool, comprising:
a set of process chambers of the integrated tool that are interconnected under vacuum and configured to perform a set of processes of a method for creating a dual metal interconnect, the method including:
depositing a first liner of a first nitride material into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms, wherein X is a minimum feature width;
depositing a second liner of a first metal material into the at least one 1X feature and at least one wider than 1X feature;
reflowing the first metal material such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains partially filled;
depositing a second metal material on the first metal material; and
reflowing the second metal material such that the at least one wider than 1X feature is filled with the second metal material.