US 11,948,884 B2
Semiconductor device and the manufacturing method thereof
Lin Tzu Hsiang, Hsinchu (TW); Chen Chih Hao, Hsinchu (TW); Wu Wei Che, Hsinchu (TW); and Chen Ying Chieh, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Aug. 24, 2021, as Appl. No. 17/410,668.
Claims priority of application No. 109129098 (TW), filed on Aug. 26, 2020.
Prior Publication US 2022/0068792 A1, Mar. 3, 2022
Int. Cl. H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01S 5/02 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 21/02433 (2013.01); H01L 21/2011 (2013.01); H01S 5/0213 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate, comprising an upper surface, a first side surface, a second side surface opposite to the first side surface, a third side surface connecting the first side surface and the second side surface, and a fourth side surface opposite to the third side surface;
wherein the upper surface comprises a first edge connecting the first side surface, a second edge opposite to the first edge and connecting the second side surface, a third edge connecting the third side surface, and a fourth edge opposite to the third edge and connecting the fourth side surface;
a horizontal direction parallel to the upper surface and a vertical direction perpendicular to the upper surface;
a first modified trace formed on the first side surface;
and
a semiconductor stack formed on the upper surface, comprising a lower surface connecting the upper surface of the substrate, and the lower surface comprises a fifth edge adjacent to the first edge and a sixth edge opposite to the fifth edge and adjacent to the second edge;
wherein a shortest distance between the first edge and the fifth edge is S1 μm, and a shortest distance between the second edge and the sixth edge is S2 μm;
wherein in a lateral view viewing from the third side surface, the first side surface forms a first acute angle with a degree of θ1 with the vertical direction, the second side surface forms a second acute angle with a degree of θ2 with the vertical direction, and a distance between the first modified trace and the upper surface in the vertical direction is D1 μm; and
wherein S1, S2, θ1, θ2 and D1 satisfy the equation:
D1≤0.2×(S1+S2)/tan θa, wherein θa=(θ1+θ2)/2.