US 11,948,882 B2
Semiconductor device and method of fabricating the same
Jihoon Chang, Yongin-si (KR); Jimin Choi, Seoul (KR); Yeonjin Lee, Suwon-si (KR); Hyeon-Woo Jang, Suwon-si (KR); and Jung-Hoon Han, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 12, 2022, as Appl. No. 17/964,244.
Application 17/964,244 is a continuation of application No. 17/153,963, filed on Jan. 21, 2021, granted, now 11,495,533.
Claims priority of application No. 10-2020-0037771 (KR), filed on Mar. 27, 2020; and application No. 10-2020-0095459 (KR), filed on Jul. 30, 2020.
Prior Publication US 2023/0043650 A1, Feb. 9, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76828 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53266 (2013.01)] 20 Claims
OG exemplary drawing
 
17. A semiconductor device comprising:
a substrate;
a first metal pattern on the substrate;
a second metal pattern on the first metal pattern;
a metal oxide pattern on the second metal pattern;
an antireflective pattern on the metal oxide pattern; and
a third metal pattern on the antireflective pattern,
wherein the first metal pattern includes copper (Cu),
each of the second metal pattern and the third metal pattern includes aluminum (Al),
the metal oxide pattern includes titanium oxide (TiO2),
the antireflective pattern includes titanium nitride (TiN), and
a thickness of the third metal pattern in a direction that is perpendicular to a top surface of the substrate is greater than a thickness of the second metal pattern in the direction.