US 11,948,881 B2
Semiconductor structure
Hsi-Kuei Cheng, Hsinchu County (TW); Chih-Kang Han, Hsin-Chu (TW); Ching-Fu Chang, Taipei (TW); and Hsin-Chieh Huang, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 8, 2021, as Appl. No. 17/370,527.
Application 16/173,319 is a division of application No. 15/410,194, filed on Jan. 19, 2017, granted, now 10,128,182, issued on Nov. 13, 2018.
Application 17/370,527 is a continuation of application No. 16/870,458, filed on May 8, 2020, granted, now 11,069,614.
Application 16/870,458 is a continuation of application No. 16/173,319, filed on Oct. 29, 2018, granted, now 10,692,809, issued on Jun. 23, 2020.
Claims priority of provisional application 62/394,452, filed on Sep. 14, 2016.
Prior Publication US 2021/0335708 A1, Oct. 28, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/4857 (2013.01); H01L 23/3121 (2013.01); H01L 23/3128 (2013.01); H01L 23/3192 (2013.01); H01L 23/5389 (2013.01); H01L 24/08 (2013.01); H01L 24/94 (2013.01); H01L 23/49816 (2013.01); H01L 23/562 (2013.01); H01L 2224/0801 (2013.01); H01L 2224/08112 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a die;
a molding surrounding the die;
a first dielectric layer disposed over the die and the molding;
a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding; and
a conductive trace, wherein the conductive trace comprises:
a via portion disposed in the second dielectric layer; and
a land portion disposed in the first dielectric layer, wherein the land portion is electrically connected to the die,
wherein a material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer, and the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.