CPC H01L 23/5222 (2013.01) [H01L 21/0226 (2013.01); H01L 21/786 (2013.01); H01L 23/12 (2013.01); H01L 23/34 (2013.01)] | 20 Claims |
1. A silicon-on-insulator (SOI) die comprising:
a silicon layer comprising a first side and a second side;
an insulative layer coupled directly to the second side of the silicon layer,
wherein the insulative layer is coupled to silicon only through the second side of the silicon layer;
wherein the SOI die is singulated;
wherein the insulative layer comprises an insulative material that fills an entire area within an outer perimeter of the insulative layer; and
wherein the silicon layer is thinned through a backgrinding process.
|