US 11,948,879 B2
Semiconductor device structure and methods of forming the same
Lin-Yu Huang, Hsinchu (TW); Li-Zhen Yu, New Taipei (TW); Chia-Hao Chang, Hsinchu (TW); Cheng-Chi Chuang, New Taipei (TW); Kuan-Lun Cheng, Hsinchu (TW); and Chih-Hao Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 27, 2022, as Appl. No. 17/874,886.
Application 17/874,886 is a division of application No. 16/935,135, filed on Jul. 21, 2020, granted, now 11,456,246.
Prior Publication US 2022/0375850 A1, Nov. 24, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5222 (2013.01) [H01L 21/76804 (2013.01); H01L 21/7682 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
forming a device over a substrate;
forming a conductive feature over the device;
forming a first dielectric material over the device;
forming an opening in the first dielectric material to expose the conductive feature, wherein the opening is defined by a first sidewall of the first dielectric material;
forming a first spacer layer on the conductive feature and the first sidewall of the first dielectric material, wherein the first spacer layer comprises a first portion and a second portion, and the first portion is in contact with the first sidewall of the first dielectric material;
forming a sacrificial spacer layer on the first spacer layer;
removing a portion of the sacrificial spacer layer to expose the second portion of the first spacer layer, wherein a remaining portion of the sacrificial spacer layer is in contact with the first portion of the first spacer layer;
forming a second spacer layer on the exposed second portion of the first spacer layer and the remaining portion of the sacrificial spacer layer;
forming a conductive structure in the opening, wherein the conductive structure includes a second sidewall; and
removing the remaining portion of the sacrificial spacer layer to form an air gap, wherein the air gap surrounds the second sidewall of the conductive structure.