US 11,948,876 B2
Package structure with through vias
Ling-Wei Li, Hsinchu (TW); Jung-Hua Chang, Hsinchu (TW); and Cheng-Lin Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 20, 2023, as Appl. No. 18/157,509.
Application 18/157,509 is a continuation of application No. 16/893,119, filed on Jun. 4, 2020, granted, now 11,569,159.
Claims priority of provisional application 62/894,329, filed on Aug. 30, 2019.
Prior Publication US 2023/0154838 A1, May 18, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 25/10 (2006.01)
CPC H01L 23/49827 (2013.01) [H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/56 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 25/105 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a conductive structure having a first portion and a second portion, wherein the second portion is wider than the first portion;
a semiconductor chip laterally separated from the conductive structure;
a protective layer laterally surrounding the conductive structure and the semiconductor chip, wherein the first portion of the conductive structure has a sidewall extending from the second portion to a surface of the protective layer, the protective layer laterally surrounds an entirety of the sidewall of the first portion, the protective layer is a single layer, and the first portion and the second portion have different sidewall slopes; and
a redistribution structure electrically connected to conductive pads of the semiconductor chip, wherein the redistribution structure extends across an interface between the conductive structure and the protective layer.