US 11,948,846 B2
Analyzing in-plane distortion
Wenjiao Wang, San Jose, CA (US); Joshua Maher, Sunnyvale, CA (US); Xinhai Han, Palo Alto, CA (US); Deenesh Padhi, Sunnyvale, CA (US); and Tza-Jing Gung, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 4, 2023, as Appl. No. 18/130,500.
Application 18/130,500 is a division of application No. 17/087,976, filed on Nov. 3, 2020, granted, now 11,637,043.
Prior Publication US 2023/0238289 A1, Jul. 27, 2023
Int. Cl. H01L 21/66 (2006.01); G03F 7/00 (2006.01); G06F 30/398 (2020.01)
CPC H01L 22/12 (2013.01) [G06F 30/398 (2020.01); G03F 7/705 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory; and
a processing device, coupled to the memory, to:
receive a first vector map associated with manufacturing parameters of a substrate, wherein the first vector map comprises a first set of vectors each indicating a distortion of a particular location of a plurality of locations on the substrate;
generate a second vector map comprising a second set of vectors by rotating a position of each vector in the first set of vectors, the second set of vectors each indicating a change in direction of a magnitude of the distortion of the particular location on the substrate;
generate a third vector map comprising a third set of vectors based on a computation of vectors in the second set of vectors and corresponding vectors in the first set of vectors, the third set of vectors reflecting reduced noise in distortions across the plurality of locations on the substrate;
generate a fourth vector map comprising a fourth set of vectors by projecting a direction component of each vector component in the third set of vectors to a radial direction; and
generate a fifth vector map comprising a fifth set of vectors by grouping the vectors of the fourth set of vectors and determining a magnitude associated with each group of vectors, wherein the fifth vector map indicates at least one of stress or strain exhibited by the substrate.