US 11,948,840 B2
Protective layer over FinFET and method of forming same
Hung-Yao Chen, Hsinchu (TW); Pin-Chu Liang, Hsinchu (TW); Hsueh-Chang Sung, Zhubei (TW); Pei-Ren Jeng, Chu-Bei (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 31, 2021, as Appl. No. 17/462,818.
Prior Publication US 2023/0064844 A1, Mar. 2, 2023
Int. Cl. H01L 21/82 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01)
CPC H01L 21/823431 (2013.01) [H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first fin and a second fin within an insulation material over a substrate, the first fin and the second fin comprising different materials, the insulation material being interposed between the first fin and the second fin, the first fin having a first width and the second fin having a second width;
forming a first capping layer over the first fin;
forming a second capping layer over the second fin, the first capping layer having a first thickness, the second capping layer having a second thickness different from the first thickness; and
forming a first dielectric layer over the first capping layer and a second dielectric layer over the second capping layer, wherein forming the first dielectric layer comprises converting an entirety of the first capping layer to a first intermediate layer, and wherein forming the second dielectric layer comprises converting an upper portion of the second capping layer to a second intermediate layer with a lower portion of the second capping layer remaining unconverted.