US 11,948,839 B2
Power reduction in finFET structures
Kuo-Cheng Ching, Zhubei (TW); Chih-Hao Wang, Zhubei (TW); and Kuan-Lun Cheng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 1, 2021, as Appl. No. 17/516,404.
Application 17/516,404 is a continuation of application No. 16/544,485, filed on Aug. 19, 2019, granted, now 11,164,786.
Application 16/544,485 is a continuation of application No. 15/718,740, filed on Sep. 28, 2017, granted, now 10,403,545.
Prior Publication US 2022/0059410 A1, Feb. 24, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 23/535 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01)
CPC H01L 21/823418 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 23/535 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/66545 (2013.01); H01L 29/6681 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a substrate;
a first semiconductor fin on the substrate;
a second semiconductor fin on the substrate, the second semiconductor fin being taller than the first semiconductor fin;
a first insulating fin over the substrate and between the first and the second semiconductor fins;
a second insulating fin on the substrate and adjacent to the first semiconductor fin, wherein the first semiconductor fin is positioned between the first and the second insulating fins;
a third insulating fin on the substrate and adjacent to the second semiconductor fin, wherein the second semiconductor fin is positioned between the first and the third insulating fins;
a first epitaxial stack on a portion of the first semiconductor fin; and
a second epitaxial stack on a portion of the second semiconductor fin, the second epitaxial stack being taller than the first epitaxial stack.