US 11,948,837 B2
Semiconductor structure having vertical conductive graphene and method for forming the same
Ching-Fu Yeh, Hsinchu (TW); Chin-Lung Chung, Hsinchu (TW); Shu-Wei Li, Hsinchu (TW); Yu-Chen Chan, Hsinchu (TW); Shin-Yi Yang, Hsinchu (TW); and Ming-Han Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,363.
Prior Publication US 2023/0064444 A1, Mar. 2, 2023
Int. Cl. H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76877 (2013.01) [H01L 21/7684 (2013.01); H01L 21/76844 (2013.01); H01L 23/53276 (2013.01); H01L 21/76846 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for making a semiconductor structure, comprising:
providing a substrate with a contact feature thereon;
forming a dielectric layer on the substrate;
etching the dielectric layer to form an interconnect opening exposing the contact feature;
forming a blocking layer in the interconnect opening to cover the contact feature with the blocking layer;
forming a metal layer on the dielectric layer;
forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate; and
removing the blocking layer.