US 11,948,835 B2
Interconnection structure with anti-adhesion layer
Che-Cheng Chang, New Taipei (TW); and Chih-Han Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Apr. 14, 2021, as Appl. No. 17/230,701.
Application 16/206,768 is a division of application No. 14/984,568, filed on Dec. 30, 2015, granted, now 10,985,055.
Application 17/230,701 is a continuation of application No. 16/206,768, filed on Nov. 30, 2018, granted, now 10,998,226.
Prior Publication US 2021/0233806 A1, Jul. 29, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 23/528 (2006.01)
CPC H01L 21/76831 (2013.01) [H01L 21/7681 (2013.01); H01L 21/76811 (2013.01); H01L 21/76813 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 21/76804 (2013.01); H01L 23/485 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first metal structure;
a dielectric structure over the first metal structure, the dielectric structure having a stepped sidewall structure, the stepped sidewall structure comprising a lower sidewall and an upper sidewall laterally set back from the lower sidewall;
a dielectric residue embedded in a recessed region in the lower sidewall of the stepped sidewall structure of the dielectric structure, the dielectric residue having a width decreasing as a distance from the first metal structure increases; and
a second metal structure extending through the dielectric structure to the first metal structure.