US 11,948,818 B2
Temperature calibration with deposition and etch process
Zhepeng Cong, San Jose, CA (US); Tao Sheng, Santa Clara, CA (US); and Vinh N. Tran, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 9, 2021, as Appl. No. 17/546,769.
Prior Publication US 2023/0187240 A1, Jun. 15, 2023
Int. Cl. H01L 21/67 (2006.01); G01J 5/00 (2022.01); H01L 21/3065 (2006.01)
CPC H01L 21/67248 (2013.01) [G01J 5/0007 (2013.01); H01L 21/3065 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of calibrating a temperature of a process chamber, suitable for use in semiconductor manufacturing, comprising:
performing a first procedure comprising:
(a) flowing a gas into a process volume while the process volume is at a first pressure;
(b) setting a temperature of a substrate support within the process volume to a first temperature;
(c) depositing a first layer of a film on a top surface of the substrate support using the gas, the first layer having a first thickness and the top surface of the substrate support does not include a substrate disposed thereon;
(d) etching the first layer of the film from the substrate support at the first temperature;
(e) determining an etch rate of the etching the first layer at the first temperature; and
(f) storing the etch rate relative to the first temperature at a first temperature etch rate;
repeating each of operations (a)-(f) at a second temperature different from the first temperature to obtain a second temperature etch rate;
determining a measured temperature curve from at least the first temperature etch rate and the second temperature etch rate; and
comparing the measured temperature curve to a calibration temperature curve.