CPC H01L 21/28088 (2013.01) [H01L 21/28185 (2013.01); H01L 29/4966 (2013.01)] | 20 Claims |
1. A device, comprising:
a pair of gate spacers on a substrate; and
a gate structure on the substrate and between the pair of gate spacers, wherein the gate structure comprises:
an interfacial layer overlying the substrate;
a metal oxide layer overlying the interfacial layer;
a nitride-containing layer overlying the metal oxide layer;
a tungsten-containing layer overlying the nitride-containing layer; and
a metal compound layer overlying the tungsten-containing layer, the metal compound layer having a different material than a material of the tungsten-containing layer.
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