US 11,948,800 B2
Semiconductor device having work function metal stack
Yen-Yu Chen, Kaohsiung (TW); Yu-Chi Lu, Hsinchu (TW); Chih-Pin Tsao, Hsinchu County (TW); and Shih-Hsun Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Dec. 14, 2022, as Appl. No. 18/066,203.
Application 18/066,203 is a continuation of application No. 17/549,673, filed on Dec. 13, 2021.
Application 17/549,673 is a continuation of application No. 16/701,009, filed on Dec. 2, 2019, granted, now 11,201,059, issued on Dec. 14, 2021.
Application 16/701,009 is a continuation of application No. 15/965,635, filed on Apr. 27, 2018, granted, now 10,497,571, issued on Dec. 3, 2019.
Prior Publication US 2023/0109915 A1, Apr. 13, 2023
Int. Cl. H01L 21/28 (2006.01); H01L 29/49 (2006.01)
CPC H01L 21/28088 (2013.01) [H01L 21/28185 (2013.01); H01L 29/4966 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a pair of gate spacers on a substrate; and
a gate structure on the substrate and between the pair of gate spacers, wherein the gate structure comprises:
an interfacial layer overlying the substrate;
a metal oxide layer overlying the interfacial layer;
a nitride-containing layer overlying the metal oxide layer;
a tungsten-containing layer overlying the nitride-containing layer; and
a metal compound layer overlying the tungsten-containing layer, the metal compound layer having a different material than a material of the tungsten-containing layer.