US 11,948,792 B2
Glass wafers for semiconductor device fabrication
Ya-Huei Chang, Zhudong Township (TW); Karl William Koch, III, Elmira, NY (US); Jen-Chieh Lin, Horseheads, NY (US); and Jian-Zhi Jay Zhang, Ithaca, NY (US)
Assigned to CORNING INCORPORATED, Corning, NY (US)
Filed by CORNING INCORPORATED, Corning, NY (US)
Filed on Nov. 25, 2020, as Appl. No. 17/104,723.
Claims priority of provisional application 62/940,996, filed on Nov. 27, 2019.
Prior Publication US 2021/0159076 A1, May 27, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 29/16 (2006.01)
CPC H01L 21/02422 (2013.01) [H01L 29/1604 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A glass wafer for a semiconductor device, comprising:
a glass substrate comprising: a top surface, a bottom surface opposing the top surface, and an edge surface between the top surface and the bottom surface;
a first coating disposed atop the glass substrate, wherein the first coating is a doped crystalline silicon coating having a sheet-resistance of 100 to 1,000,000 ohm per square; and
a second coating having one or more layers disposed atop the glass substrate, wherein the second coating comprises a layer of silicon nitride, a layer of undoped amorphous silicon, and a layer of silicon dioxide, wherein the layer of silicon nitride is disposed atop the layer of undoped amorphous silicon, wherein the layer of undoped amorphous silicon is disposed atop the layer of silicon dioxide, and wherein the layer of silicon dioxide is disposed atop the doped crystalline silicon coating,
wherein the glass wafer has an average transmittance (T) of less than 50% over an entire wavelength range of 400 nm to 1000 nm.