CPC G11C 11/2275 (2013.01) [G11C 11/2255 (2013.01); G11C 11/2257 (2013.01); G11C 11/2273 (2013.01); G11C 11/2297 (2013.01)] | 20 Claims |
1. A method comprising programming a non-volatile analog resistive memory cell which comprises a ferroelectric field-effect transistor (FeFET) device and a resistive memory device coupled to the FeFET device, wherein programming the non-volatile analog resistive memory cell comprises applying a sequence of programming pulses to the non-volatile analog resistive memory cell for modulating a polarization state of the FeFET device and affecting a linear response in a conductance tuning of the resistive memory device in response to modulating the polarization state of the FeFET device.
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