US 11,947,262 B2
Process environment for inorganic resist patterning
Alan J. Telecky, Albany, OR (US); Jason K. Stowers, Corvallis, OR (US); Douglas A. Keszler, Corvallis, OR (US); Stephen T. Meyers, Corvallis, OR (US); Peter de Schepper, Wijnegem (BE); Sonia Castellanos Ortega, Leuven (BE); Michael Greer, Corvallis, OR (US); and Kirsten Louthan, Philomath, OR (US)
Assigned to Inpria Corporation, Corvallis, OR (US)
Filed by Inpria Corporation, Corvallis, OR (US)
Filed on Mar. 1, 2021, as Appl. No. 17/188,679.
Claims priority of provisional application 62/984,023, filed on Mar. 2, 2020.
Prior Publication US 2021/0271170 A1, Sep. 2, 2021
Int. Cl. G03F 7/38 (2006.01); G03F 7/004 (2006.01)
CPC G03F 7/38 (2013.01) [G03F 7/0042 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a radiation patternable organo tin-based coating on a wafer, the coating having an average thickness from about 1 nm to about 500 nm, the method comprising:
contacting the wafer with the coating with an atmosphere comprising a CO2 concentration from about 0.1 mole percent to about 10 mole percent prior to development to form a physical pattern having an increased critical dimension for a given exposure dose relative to a corresponding wafer not contacted with the atmosphere with CO2, the coating comprising a composition represented by the formula RSnOxOH3-x wherein R is an organic ligand with 1-31 carbon atoms, with a carbon atom bonded to Sn and with one or more carbon atoms optionally substituted with one or more heteroatom functional groups, wherein the remaining atmosphere comprises an inert gas.